首页> 外文OA文献 >Hall effect and magnetoresistance in single crystals of NdFeAsO$_{1-x}$F$_{x}$
【2h】

Hall effect and magnetoresistance in single crystals of NdFeAsO$_{1-x}$F$_{x}$

机译:霍尔效应和单晶体中的磁电阻   NdFeasO $ _ {1-X} $ F $ _ {X} $

代理获取
本网站仅为用户提供外文OA文献查询和代理获取服务,本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文,但由于OA文献来源多样且变更频繁,仍可能出现获取不到、文献不完整或与标题不符等情况,如果获取不到我们将提供退款服务。请知悉。
获取外文期刊封面目录资料

摘要

Hall effect and magnetoresistance have been measured on single crystals of$NdFeAsO_{1-x}F_{x}$ with x = 0 ($T_c$ = 0 $ $K) and x = 0.18 ($T_c$ = 50 $$K). For the undoped samples, strong Hall effect and magnetoresistance withstrong temperature dependence were found below about 150 K. Themagnetoresistance was found to be as large as 30% at 15 K at a magnetic fieldof 9 T. From the transport data we found that the transition near 155 K wasaccomplished in two steps: first one occurs at 155 K which may be associatedwith the structural transition, the second one takes place at about 140 K whichmay correspond to the spin-density wave like transition. In the superconductingsample with $T_c$ = 50 $ $K, it is found that the Hall coefficient also revealsa strong temperature dependence with a negative sign. But the magnetoresistancebecomes very weak and does not satisfy the Kohler's scaling law. Thesedilemmatic results (strong Hall effect and very weak magnetoresistance) preventto understand the normal state electric conduction by a simple multi-band modelby taking account the electron and hole pockets. Detailed analysis furtherindicates that the strong temperature dependence of $R_H$ cannot be easilyunderstood with the simple multi-band model either. A picture concerning asuppression to the density of states at the Fermi energy in loweringtemperature is more reasonable. A comparison between the Hall coefficient ofthe undoped sample and the superconducting sample suggests that the doping mayremove the nesting condition for the formation of the SDW order, since bothsamples have very similar temperature dependence above 175 K.
机译:在x = 0($ T_c $ = 0 $ $ K)和x = 0.18($ T_c $ = 50 $$ K)的$ NdFeAsO_ {1-x} F_ {x} $单晶上测量了霍尔效应和磁阻)。对于未掺杂的样品,在约150 K以下发现强霍尔效应和磁电阻,并具有强烈​​的温度依赖性。在9 T的磁场下,磁电阻在15 K时的磁电阻高达30%。从传输数据中我们发现,跃迁接近155 K分两步完成:第一个发生在155 K处,这可能与结构转变有关;第二个发生在约140 K处,这可能对应于类似自旋密度波的转变。在$ T_c $ = 50 $ K的超导样品中,发现霍尔系数还显示出强烈的温度依赖性,并带有负号。但是磁阻变得很弱,不能满足科勒的定标定律。这些两难的结果(强霍尔效应和非常弱的磁阻)通过考虑电子和空穴的形成,阻止了通过简单的多频带模型来理解常态导电。详细的分析进一步表明,使用简单的多频带模型也不容易理解$ R_H $的强温度依赖性。关于降低温度下费米能量处的态密度的图片更为合理。未掺杂样品和超导样品的霍尔系数之间的比较表明,掺杂可能会消除用于形成SDW阶的嵌套条件,因为两个样品在175 K以上都具有非常相似的温度依赖性。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
代理获取

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号